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BGA734L16 low power tri-band umts lna (2100, 1900, 800 mhz) data sheet, v1.0, january 2008 rf & protection devices
edition 2008-01-25 published by infineon technologies ag 81726 mnchen, germany ? infineon technologies ag 2009. all rights reserved. legal disclaimer the information given in this docu ment shall in no event be regarded as a guarantee of conditions or characteristics (?beschaffenheitsgarantie?). with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the app lication of the device, infi neon technologies hereby disclaims any and all warranties a nd liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. information for further information on technology , delivery terms and conditions and prices please contact your nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements components may contain da ngerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safe ty or effectiveness of that device or system. life support devices or systems are intended to be implanted in the hu man body, or to support an d/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
BGA734L16 - low power tri-band umts lna data sheet 3 v1.0, 2008-01-25 BGA734L16 revision history: 2008-01-25, v1.0 previous version: v1.2, 2007-07-18 page subjects (major cha nges since last revision) 8-10 improved low gain mode iip 3 8-10 improved low gain mode p 1db
data sheet 4 v1.0, 2008-01-25 BGA734L16 - low power tri-band umts lna description 1 description the BGA734L16 is a highly flexible tri-band (2100, 19 00, 850/800 mhz) low noise am plifier mmic for worldwide use. based on infineon?s proprietary and cost-effective sige:c technology, the BGA734L16 features dynamic gain control, temperature stabiliz ation, standby mode, and 1 k v esd protection on-chip and matching off chip. because the matching is off chip, the 1900 mhz path can be conv erted into a 2100 mhz path and vice versa by optimizing the input and output matching network . this document specifies device performance for the most common band combination - umts bands i, ii, and v. figure 1 block diagram of triple-band lna features ? gain: 15 / -8 db in high / low gain ? noise figure: 1.2 db in high gain mode ? low band (5, 6, 8, foma800) ? mid band (2, 3, 9, foma1700) ? high band (1, 4, 10) ? high and low gain modes support ? supply current: 3.5 / 0.65 ma in high / low gain modes ? standby mode (<10 a typ) ? 1 kv hbm esd protection ? small leadless tslp-16-1 package (2.3 x 2.3 x 0.39 mm) ? pb-free (rohs compliant) package tslp-16-1 package type package marking chip BGA734L16 tslp-16 -1 bga734 t1520 8 7 6 9 10 11 12 13 14 15 16 1 2 3 4 5 biasing & logic circuitry vcc vgs rfoutm rfouth rfoutl ven1 ven2 rfinl rfinm rfinh n/c rfgndh rfgndm n/c n/c n/c
BGA734L16 - low power tri-band umts lna electrical characteristics absolute maximum ratings data sheet 5 v1.0, 2008-01-25 2 electrical characteristics 2.1 absolute maximum ratings 2.2 thermal resistance 2.3 esd integrity table 1 absolute maximum ratings parameter symbol values unit note / test condition min. max. supply voltage v cc -0.3 3.6 v supply current i cc 5ma pin voltage v pin -0.3 v cc +0.3 v all pins except rf input pins pin voltage rf input pins v rfin -0.3 0.9 v rf input power p rfin 4dbm junction temperature t j 150 c ambient temperature range t a -30 85 c storage temperature range t stg -65 150 c table 2 thermal resistance parameter symbol value unit note / test conditions thermal resistance junction to soldering point r thjs 110 k/w table 3 esd integrity parameter symbol value unit note / test conditions typ. esd hardness hbm 1) 1) according to jesd22-a114 v esd-hbm 1000 v all pins
data sheet 6 v1.0, 2008-01-25 BGA734L16 - low power tri-band umts lna electrical characteristics dc characteristics 2.4 dc characteristics 2.5 band select / gain control truth table table 4 dc characteristics, t a = 25 c parameter symbol values unit note / test condition min. typ. max. supply voltage v cc 2.7 2.8 3.0 v supply current high gain mode i cchg 3.5 ma all bands supply current low gain mode i cclg 650 a all bands supply current standby mode i ccoff 0.1 2 a logic level high v hi 1.5 2.8 v ven1 and ven2 logic level low v low 0.0 0.5 v logic currents ven i enl 0.2 a ven1 and ven2 i enh 10.0 a logic currents vgs i gsl 0.1 avgs i gsh 5.0 a table 5 band select truth table band i band ii band v power down vcchhhh ven1 h h l l ven2 h l h l table 6 gain control truth table high gain low gain vgs h l
BGA734L16 - low power tri-band umts lna electrical characteristics logic signal characteristics; t a = 25 c data sheet 7 v1.0, 2008-01-25 2.6 logic signal characteristics; t a = 25 c current consumption of logi c inputs ven1, ven2, vgs 2.7 switching times logic currents i en1,2 = f( v en1,2 ) v cc = 2.8 v logic currents i gs = f( v gs ) v cc = 2.8 v table 7 typical switching times; t a = -30... 85 c parameter symbol values unit note / test condition min. typ. max. settling time gainstep t gs 1.2 s switching lg ? hg all bands settling time bandselect t bs 1.2 s switching from any band to a different band 0 0.5 1 1.5 2 2.5 3 0 2 4 6 8 10 12 v en1,2 [v] i en1,2 [a] 0 0.5 1 1.5 2 2.5 3 0 2 4 6 v gs [v] i gs [a]
data sheet 8 v1.0, 2008-01-25 BGA734L16 - low power tri-band umts lna electrical characteristics measured rf characteristics low band (umts band v) 2.8 measured rf characteristi cs low band (umts band v) table 8 typical characteristics 800 mhz band, t a = 25 c, vcc = 2.8 v parameter symbol values unit note / test condition min. typ. max. pass band range 869 894 mhz input power range -100 0 dbm current consumption i cchg 3.5 ma high gain mode i cclg 0.65 ma low gain mode gain s 21hg 15.2 db high gain mode s 21lg -6.8 db low gain mode reverse isolation 1) 1) verified by random sampling; not 100% rf tested s 12hg -34 db high gain mode s 12lg -6.8 db low gain mode noise figure nf hg 1.2 db high gain mode nf lg 6.9 db low gain mode input return loss 1) s 11hg -13 db 50 ?, high gain mode s 11lg -18 db 50 ?, low gain mode output return loss 1) s 22hg -24 db 50 ? , high gain mode s 22lg -11 db 50 ? , low gain mode stability factor 2) 2) not tested in production; guaranteed by device design k >2.1 dc to 10 ghz; all gain modes input compression point 1) ip 1dbhg -12 dbm high gain mode ip 1dblg -6 dbm low gain mode inband iip3 1) f 1 - f 2 = 1 mhz p f1 = p f2 = -25 dbm iip3 hg iip3 lg -6 5 dbm high gain mode low gain mode
BGA734L16 - low power tri-band umts lna electrical characteristics measured rf characteristics mid band (umts band ii) data sheet 9 v1.0, 2008-01-25 2.9 measured rf characteristi cs mid band (umts band ii) table 9 typical characteristics 1900 mhz band, t a = 25 c, vcc = 2.8 v parameter symbol values unit note / test condition min. typ. max. pass band range 1930 1990 mhz input power range -100 0 dbm current consumption i cchg 3.4 ma high gain mode i cclg 0.65 ma low gain mode gain s 21hg 16.5 db high gain mode s 21lg -6.9 db low gain mode reverse isolation 1) 1) verified by random sampling; not 100% rf tested s 12hg -35 db high gain mode s 12lg -7 db low gain mode noise figure nf hg 1.0 db high gain mode nf lg 6.8 db low gain mode input return loss 1) s 11hg -13 db 50 ?, high gain mode s 11lg -12 db 50 ?, low gain mode output return loss 1) s 22hg -20 db 50 ? , high gain mode s 22lg -17 db 50 ? , low gain mode stability factor 2) 2) not tested in production; guaranteed by device design k >2.0 dc to 10 ghz; all gain modes input compression point 1) ip 1dbhg -10 dbm high gain mode ip 1dblg -4 dbm low gain mode inband iip3 1) f 1 - f 2 = 1 mhz p f1 = p f2 = -26 dbm iip3 hg iip3 lg -5 6 dbm high gain mode low gain mode
data sheet 10 v1.0, 2008-01-25 BGA734L16 - low power tri-band umts lna electrical characteristics measured rf characteristics high band (umts band i) 2.10 measured rf characteris tics high band (umts band i) table 10 typical characteristics 2100 mhz band, t a = 25 c, vcc = 2.8 v parameter symbol values unit note / test condition min. typ. max. pass band range 2110 2170 mhz input power range -100 0 dbm current consumption i cchg 3.5 ma high gain mode i cclg 0.65 ma low gain mode gain s 21hg 16.5 db high gain mode s 21lg -7.7 db low gain mode reverse isolation 1) 1) verified by random sampling; not 100% rf tested s 12hg -36 db high gain mode s 12lg -8 db low gain mode noise figure nf hg 1.1 db high gain mode nf lg 7.4 db low gain mode input return loss 1) s 11hg -13 db 50 ?, high gain mode s 11lg -27 db 50 ?, low gain mode output return loss 1) s 22hg -18 db 50 ? , high gain mode s 22lg -9 db 50 ? , low gain mode stability factor 2) 2) not tested in production; guaranteed by device design k >1.8 dc to 10 ghz; all gain modes input compression point 1) ip 1dbhg -11 dbm high gain mode ip 1dblg -4 dbm low gain mode inband iip3 1) f 1 - f 2 = 1 mhz p f1 = p f2 = -27 dbm iip3 hg iip3 lg -6 7 dbm high gain mode low gain mode
BGA734L16 - low power tri-band umts lna electrical characteristics measured performance low band high gain mode vs. frequency data sheet 11 v1.0, 2008-01-25 2.11 measured performance low band high gain mode vs. frequency t a =25c, v cc = 2.8 v, v gs = 2.8 v, v en1 = 0 v, v en2 = 2.8 v power gain |s 21 | = f ( f ) power gain wideband |s 21 | = f ( f ) matching | s 11 | = f ( f ), | s 22 | = f ( f ) gainstep hg - lg | ? s 21 | = f ( f ) 0.86 0.87 0.88 0.89 0.9 13 13.5 14 14.5 15 15.5 16 16.5 17 17.5 18 frequency [ghz] power gain [db] ?30c 25c 85c 0 2 4 6 8 ?40 ?30 ?20 ?10 0 10 20 frequency [ghz] power gain [db] 0.86 0.87 0.88 0.89 0.9 ?40 ?35 ?30 ?25 ?20 ?15 ?10 ?5 0 frequency [ghz] |s 11 |, |s 22 | [db] s 11 s 22 0.86 0.87 0.88 0.89 0.9 20 20.5 21 21.5 22 22.5 23 23.5 24 frequency [ghz] delta gain [db] ?30c 25c 85c
data sheet 12 v1.0, 2008-01-25 BGA734L16 - low power tri-band umts lna electrical characteristics measured performance low band high gain mode vs. temperature 2.12 measured performance low band high gain mode vs. temperature v cc = 2.8 v, v gs = 2.8 v, v en1 = 0 v, v en2 = 2.8 v noise figure nf = f ( f ) input compression p 1db = f ( f ) power gain |s 21 | = f ( t a ) supply current i cc = f ( t a ) 0.86 0.87 0.88 0.89 0.9 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 frequency [ghz] nf [db] 0.86 0.87 0.88 0.89 0.9 ?14 ?13 ?12 ?11 ?10 ?9 ?8 frequency [ghz] p1db [dbm] ?40 ?20 0 20 40 60 80 100 13 14 15 16 17 18 19 t a [c] power gain [db] ?40 ?20 0 20 40 60 80 100 3 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 4 t a [c] i cc [ma]
BGA734L16 - low power tri-band umts lna electrical characteristics measured performance low band low gain mode vs. frequency data sheet 13 v1.0, 2008-01-25 2.13 measured performance low band low gain mode vs. frequency t a = 25 c, v cc = 2.8 v, v gs = 0 v, v en1 = 0 v, v en2 = 2.8 v noise figure nf = f ( t a ) input compression p 1db = f ( t a ) power gain |s 21 | = f ( f ) power gain wideband |s 21 | = f ( f ) ?40 ?20 0 20 40 60 80 100 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 t a [c] nf [db] ?40 ?20 0 20 40 60 80 100 ?16 ?14 ?12 ?10 ?8 ?6 ?4 t a [c] p1db [dbm] 0.86 0.87 0.88 0.89 0.9 ?9 ?8.5 ?8 ?7.5 ?7 ?6.5 ?6 ?5.5 ?5 frequency [ghz] power gain [db] ?30c 25c 85c 0 2 4 6 8 ?60 ?50 ?40 ?30 ?20 ?10 0 frequency [ghz] power gain [db]
data sheet 14 v1.0, 2008-01-25 BGA734L16 - low power tri-band umts lna electrical characteristics measured performance low band low gain mode vs. frequency matching | s 11 | = f ( f ), | s 22 | = f ( f ) noise figure nf = f ( f ) input compression p 1db = f ( f ) 0.86 0.87 0.88 0.89 0.9 ?40 ?35 ?30 ?25 ?20 ?15 ?10 ?5 0 frequency [ghz] |s 11 |, |s 22 | [db] s 11 s 22 0.86 0.87 0.88 0.89 0.9 5 5.5 6 6.5 7 7.5 8 8.5 9 frequency [ghz] nf [db] 0.86 0.87 0.88 0.89 0.9 ?8 ?7 ?6 ?5 ?4 ?3 ?2 frequency [ghz] p1db [dbm]
BGA734L16 - low power tri-band umts lna electrical characteristics measured performance low band low gain mode vs. temperature data sheet 15 v1.0, 2008-01-25 2.14 measured performance low band low gain mode vs. temperature v cc = 2.8 v, v gs = 0 v, v en1 = 0 v, v en2 = 2.8 v power gain |s 21 | = f ( t a ) supply current i cc = f ( t a ) noise figure nf = f ( t a ) input compression p 1db = f ( t a ) ?40 ?20 0 20 40 60 80 100 ?10 ?9.5 ?9 ?8.5 ?8 ?7.5 ?7 ?6.5 ?6 ?5.5 ?5 t a [c] power gain [db] ?40 ?20 0 20 40 60 80 100 0.5 0.55 0.6 0.65 0.7 0.75 0.8 t a [c] i cc [ma] ?40 ?20 0 20 40 60 80 100 5 5.5 6 6.5 7 7.5 8 8.5 9 9.5 10 t a [c] nf [db] ?40 ?20 0 20 40 60 80 100 ?10 ?9 ?8 ?7 ?6 ?5 ?4 ?3 ?2 ?1 0 t a [c] p1db [dbm]
data sheet 16 v1.0, 2008-01-25 BGA734L16 - low power tri-band umts lna electrical characteristics measured performance mid band high gain mode vs. frequency 2.15 measured performance mid band high gain mode vs. frequency t a = 25 c, v cc = 2.8 v, v gs = 2.8 v, v en1 = 2.8 v, v en2 = 0 v power gain |s 21 | = f ( f ) power gain wideband |s 21 | = f ( f ) matching | s 11 | = f ( f ), | s 22 | = f ( f ) gainstep hg - lg | ? s 21 | = f ( f ) 1.93 1.94 1.95 1.96 1.97 1.98 1.99 13 13.5 14 14.5 15 15.5 16 16.5 17 17.5 18 frequency [ghz] power gain [db] ?30c 25c 85c 0 2 4 6 8 ?40 ?30 ?20 ?10 0 10 20 frequency [ghz] power gain [db] 1.93 1.94 1.95 1.96 1.97 1.98 1.99 ?40 ?35 ?30 ?25 ?20 ?15 ?10 ?5 0 frequency [ghz] |s 11 |, |s 22 | [db] s 11 s 22 1.93 1.94 1.95 1.96 1.97 1.98 1.99 22 22.5 23 23.5 24 24.5 25 25.5 26 frequency [ghz] delta gain [db] ?30c 25c 85c
BGA734L16 - low power tri-band umts lna electrical characteristics measured performance mid band high gain mode vs. temperature data sheet 17 v1.0, 2008-01-25 2.16 measured performance mid band hi gh gain mode vs. temperature v cc = 2.8 v, v gs = 2.8 v, v en1 = 2.8 v, v en2 = 0 v noise figure nf = f ( f ) input compression p 1db = f ( f ) power gain |s 21 | = f ( t a ) supply current i cc = f ( t a ) 1.93 1.94 1.95 1.96 1.97 1.98 1.99 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 frequency [ghz] nf [db] 1.93 1.94 1.95 1.96 1.97 1.98 1.99 ?14 ?13 ?12 ?11 ?10 ?9 ?8 frequency [ghz] p1db [dbm] ?40 ?20 0 20 40 60 80 100 13 14 15 16 17 18 19 t a [c] power gain [db] ?40 ?20 0 20 40 60 80 100 3 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 4 t a [c] i cc [ma]
data sheet 18 v1.0, 2008-01-25 BGA734L16 - low power tri-band umts lna electrical characteristics measured performance mid band low gain mode vs. frequency 2.17 measured performance mid band low gain mode vs. frequency t a = 25 c, v cc = 2.8 v, v gs = 0 v, v en1 = 2.8 v, v en2 = 0 v noise figure nf = f ( t a ) input compression p 1db = f ( t a ) power gain |s 21 | = f ( f ) power gain wideband |s 21 | = f ( f ) ?40 ?20 0 20 40 60 80 100 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 t a [c] nf [db] ?40 ?20 0 20 40 60 80 100 ?16 ?14 ?12 ?10 ?8 ?6 ?4 t a [c] p1db [dbm] 1.93 1.94 1.95 1.96 1.97 1.98 1.99 ?9 ?8.5 ?8 ?7.5 ?7 ?6.5 ?6 ?5.5 ?5 frequency [ghz] power gain [db] ?30c 25c 85c 0 2 4 6 8 ?60 ?50 ?40 ?30 ?20 ?10 0 frequency [ghz] power gain [db]
BGA734L16 - low power tri-band umts lna electrical characteristics measured performance mid band low gain mode vs. frequency data sheet 19 v1.0, 2008-01-25 matching | s 11 | = f ( f ), | s 22 | = f ( f ) noise figure nf = f ( f ) input compression p 1db = f ( f ) 1.93 1.94 1.95 1.96 1.97 1.98 1.99 ?40 ?35 ?30 ?25 ?20 ?15 ?10 ?5 0 frequency [ghz] |s 11 |, |s 22 | [db] s 11 s 22 1.93 1.94 1.95 1.96 1.97 1.98 1.99 5 5.5 6 6.5 7 7.5 8 8.5 9 frequency [ghz] nf [db] 1.93 1.94 1.95 1.96 1.97 1.98 1.99 ?8 ?7 ?6 ?5 ?4 ?3 ?2 frequency [ghz] p1db [dbm]
data sheet 20 v1.0, 2008-01-25 BGA734L16 - low power tri-band umts lna electrical characteristics measured performance mid band low gain mode vs. temperature 2.18 measured performance mid band low gain mode vs. temperature v cc = 2.8 v, v gs = 0 v, v en1 = 2.8 v, v en2 = 0 v noise figure nf = f ( t a ) input compression p 1db = f ( t a ) ?40 ?20 0 20 40 60 80 100 5 5.5 6 6.5 7 7.5 8 8.5 9 9.5 10 t a [c] nf [db] ?40 ?20 0 20 40 60 80 100 ?10 ?9 ?8 ?7 ?6 ?5 ?4 ?3 ?2 ?1 0 t a [c] p1db [dbm]
BGA734L16 - low power tri-band umts lna electrical characteristics measured performance high band high gain mode vs. frequency data sheet 21 v1.0, 2008-01-25 2.19 measured performance high band high gain mode vs. frequency t a = 25 c, v cc = 2.8 v, v gs = 2.8 v, v en1 = 2.8 v, v en2 = 2.8 v power gain |s 21 | = f ( f ) power gain wideband |s 21 | = f ( f ) matching | s 11 | = f ( f ), | s 22 | = f ( f ) gainstep hg - lg | ? s 21 | = f ( f ) 2.11 2.12 2.13 2.14 2.15 2.16 2.17 13 13.5 14 14.5 15 15.5 16 16.5 17 17.5 18 frequency [ghz] power gain [db] ?30c 25c 85c 0 2 4 6 8 ?40 ?30 ?20 ?10 0 10 20 frequency [ghz] power gain [db] 2.11 2.12 2.13 2.14 2.15 2.16 2.17 ?40 ?35 ?30 ?25 ?20 ?15 ?10 ?5 0 frequency [ghz] |s 11 |, |s 22 | [db] s 11 s 22 2.11 2.12 2.13 2.14 2.15 2.16 2.17 22 22.5 23 23.5 24 24.5 25 25.5 26 26.5 27 27.5 28 frequency [ghz] delta gain [db] ?30c 25c 85c
data sheet 22 v1.0, 2008-01-25 BGA734L16 - low power tri-band umts lna electrical characteristics measured performance high band high gain mode vs. temperature 2.20 measured performance high band high gain mode vs. temperature v cc = 2.8 v, v gs = 2.8 v, v en1 = 2.8 v, v en2 = 2.8 v noise figure nf = f ( f ) input compression p 1db = f ( f ) power gain |s 21 | = f ( t a ) supply current i cc = f ( t a ) 2.11 2.12 2.13 2.14 2.15 2.16 2.17 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 frequency [ghz] nf [db] 2.11 2.12 2.13 2.14 2.15 2.16 2.17 ?14 ?13 ?12 ?11 ?10 ?9 ?8 frequency [ghz] p1db [dbm] ?40 ?20 0 20 40 60 80 100 13 14 15 16 17 18 19 t a [c] power gain [db] ?40 ?20 0 20 40 60 80 100 3 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 4 t a [c] i cc [ma]
BGA734L16 - low power tri-band umts lna electrical characteristics measured performance high band low gain mode vs. frequency data sheet 23 v1.0, 2008-01-25 2.21 measured performance high ba nd low gain mode vs. frequency t a = 25 c, v cc = 2.8 v, v gs = 0 v, v en1 = 2.8 v, v en2 = 2.8 v noise figure nf = f ( t a ) input compression p 1db = f ( t a ) power gain |s 21 | = f ( f ) power gain wideband |s 21 | = f ( f ) ?40 ?20 0 20 40 60 80 100 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 t a [c] nf [db] ?40 ?20 0 20 40 60 80 100 ?16 ?14 ?12 ?10 ?8 ?6 ?4 t a [c] p1db [dbm] 2.11 2.12 2.13 2.14 2.15 2.16 2.17 ?9 ?8.5 ?8 ?7.5 ?7 ?6.5 ?6 ?5.5 ?5 frequency [ghz] power gain [db] ?30c 25c 85c 0 2 4 6 8 ?60 ?50 ?40 ?30 ?20 ?10 0 frequency [ghz] power gain [db]
data sheet 24 v1.0, 2008-01-25 BGA734L16 - low power tri-band umts lna electrical characteristics measured performance high band low gain mode vs. frequency matching | s 11 | = f ( f ), | s 22 | = f ( f ) noise figure nf = f ( f ) input compression p 1db = f ( f ) 2.11 2.12 2.13 2.14 2.15 2.16 2.17 ?40 ?35 ?30 ?25 ?20 ?15 ?10 ?5 0 frequency [ghz] |s 11 |, |s 22 | [db] s 11 s 22 2.11 2.12 2.13 2.14 2.15 2.16 2.17 5 5.5 6 6.5 7 7.5 8 8.5 9 frequency [ghz] nf [db] 2.11 2.12 2.13 2.14 2.15 2.16 2.17 ?8 ?7 ?6 ?5 ?4 ?3 ?2 frequency [ghz] p1db [dbm]
BGA734L16 - low power tri-band umts lna electrical characteristics measured performance high band low gain mode vs. temperature data sheet 25 v1.0, 2008-01-25 2.22 measured performance high band low gain mode vs. temperature v cc = 2.8 v, v gs = 0 v, v en1 = 2.8 v, v en2 = 2.8 v power gain |s 21 | = f ( t a ) supply current i cc = f ( t a ) noise figure nf = f ( t a ) input compression p 1db = f ( t a ) ?40 ?20 0 20 40 60 80 100 ?10 ?9.5 ?9 ?8.5 ?8 ?7.5 ?7 ?6.5 ?6 ?5.5 ?5 t a [c] power gain [db] ?40 ?20 0 20 40 60 80 100 0.5 0.55 0.6 0.65 0.7 0.75 0.8 t a [c] i cc [ma] ?40 ?20 0 20 40 60 80 100 5 5.5 6 6.5 7 7.5 8 8.5 9 9.5 10 t a [c] nf [db] ?40 ?20 0 20 40 60 80 100 ?10 ?9 ?8 ?7 ?6 ?5 ?4 ?3 ?2 ?1 0 t a [c] p1db [dbm]
data sheet 26 v1.0, 2008-01-25 BGA734L16 - low power tri-band umts lna application circuit and block diagram umts bands i, ii and v application circuit schematic 3 application circuit and block diagram 3.1 umts bands i, ii and v a pplication circuit schematic figure 2 application circuit wi th chip outline (top view) note: package paddle (pin 0) has to be rf grounded. table 11 parts list part number part type manufacturer size comment l1 ... l3 chip inductor various 0402 wirewound, q 50 c1 ... c7 chip capacitor various 0402 c1 10pf l1 3.9nh l1 3.9nh c2 22pf c3 10pf l2 2.7nh c5 3.0pf l3 9.1nh v cc = 2.8 v v gs = 0 / 2.8 v rfout 1900 mhz rfout 2100 mhz rfout 800 mhz rfin 1900 mhz rfin 2100 mhz rfin 800 mhz v en = 0 / 2.8 v v en = 0 / 2.8 v c4 22pf c6 22pf c7 10nf n/c n/c 8 7 6 9 10 11 12 13 14 15 16 1 2 3 4 5 biasing & logic circuitry vcc vgs rfoutm rfouth rfoutl ven1 ven2 rfinl rfinm rfinh n/c n/c rfgndh rfgndm n/c n/c 0 gnd
BGA734L16 - low power tri-band umts lna application circuit and block diagram pin definition data sheet 27 v1.0, 2008-01-25 3.2 pin definition table 12 pin definition and function pin number symbol function 0 gnd ground connection for low band (800 mhz) lna and control circuity (package paddle) 1 n/c not connected 2 vgs gain step control 3 vcc supply voltage 4 rfgndh high band (2100 mhz) lna emitter ground 5 n/c not connected 6 rfinm mid band (1900 mhz) lna input 7 rfinh high band (2100 mhz) lna input 8 rfgndm mid band (1900 mhz) lna emitter ground 9 n/c not connected 10 rfinl low band (800 mhz) lna input 11 ven2 band select control 12 ven1 band select control 13 n/c not connected 14 rfoutl low band (800 mhz) lna output 15 rfouth high band (2100 mhz) lna output 16 rfoutm mid band (1900 mhz) lna output
data sheet 28 v1.0, 2008-01-25 BGA734L16 - low power tri-band umts lna application circuit and block diagram application board 3.3 application board figure 3 application board layout on 3-layer fr4. top layer thickness: 0.2 mm, bottom layer thickness: 0.8 mm, 35 m cu metallization, gold plated. board size: 21 x 50 mm figure 4 cross-section view of application board top layer (top view) middle layer (top view) bottom layer (top view) 0.017 mm copper 0.100 mm prepreg fr4 0.100 mm prepreg fr4 0.035 mm copper 0.460 mm fr4 0.100 mm prepreg fr4 0.100 mm prepreg fr4 0.017 mm copper
BGA734L16 - low power tri-band umts lna application circuit and block diagram application board data sheet 29 v1.0, 2008-01-25 figure 5 detail of application board layout note: in order to achieve the same performance as given in this datasheet please follow the suggested pcb-layout as closely as possible. the position of th e gnd vias is critical for rf performance. rfinh 3 11 10 9 8 7 6 5 4 16 15 14 13 12 1 2 rfoutm rfouth rfoutl rfi nl rfgndm vcc rfi nm rf gndh en1 en2 gs gnd
data sheet 30 v1.0, 2008-01-25 BGA734L16 - low power tri-band umts lna physical characteristics package footprint 4 physical characteristics 4.1 package footprint figure 6 recommended footprint and stenci l layout for the tslp-16-1 package.
BGA734L16 - low power tri-band umts lna physical characteristics package dimensions data sheet 31 v1.0, 2008-01-25 4.2 package dimensions figure 7 package outline (top, side and bottom view) gpc01203 top view bottom view pin 1 marking 0.05 max. 0.39 +0.01 -0.03 16x0.2 0.035 1 16 0.05 1 0.05 2 0.05x45? 0.035 16x0.2 1.4 0.035 0.05 2.3 0.035 1.4 1 0.05 0.05 2 0.05 2.3 1) 1) dimension applies to plated terminals 2 3 4 5 15 14 13 911 10 12 8 7 6

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